The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2019

Filed:

Apr. 14, 2015
Applicant:

Samsung Sdi Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Hye Jin Kim, Uiwang-si, KR;

Seong Ryong Nam, Uiwang-si, KR;

Sung Min Ko, Uiwang-si, KR;

Mi Sun Kim, Uiwang-si, KR;

Ji Yeon Lee, Uiwang-si, KR;

Assignee:

Samsung SDI Co., Ltd., Yongin-Si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08F 2/50 (2006.01); H01L 51/00 (2006.01); H01L 51/52 (2006.01); C07C 69/54 (2006.01); C07C 323/19 (2006.01); C08F 220/30 (2006.01); C08F 220/34 (2006.01); C08F 222/10 (2006.01); C09D 133/08 (2006.01); C09D 133/14 (2006.01); C09D 135/02 (2006.01); H01L 33/56 (2010.01);
U.S. Cl.
CPC ...
C08F 2/50 (2013.01); C07C 69/54 (2013.01); C07C 323/19 (2013.01); C08F 220/30 (2013.01); C08F 220/34 (2013.01); C08F 222/1006 (2013.01); C09D 133/08 (2013.01); C09D 133/14 (2013.01); C09D 135/02 (2013.01); H01L 33/56 (2013.01); H01L 51/004 (2013.01); C08F 2220/301 (2013.01); C08F 2222/102 (2013.01); C08F 2222/1013 (2013.01); C08F 2800/20 (2013.01); H01L 51/5253 (2013.01); H01L 2251/301 (2013.01); H01L 2251/303 (2013.01);
Abstract

A display sealing material composition includes a photopolymerization initiator and a photocuring monomer, the photocuring monomer comprising: a monomer not having the aromatic hydrocarbon group; and a monomer having two or more substituted or unsubstituted phenyl groups. An organic protection layer obtained by curing the composition for a display sealing material has approximately 400 nm/min or less plasma etching rate being represented by formula 1 below and approximately 2 nm or less surface roughness.Plasma etching rate(nm/min)=(0−1)/  <Formula 1>wherein T0, T1, and M are set forth in the specification.


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