The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Jan. 29, 2018
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Tsukuru Katsuyama, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/22 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01); H01S 5/042 (2006.01); H01S 5/227 (2006.01); H01S 5/30 (2006.01); H01S 5/026 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3401 (2013.01); H01S 5/0424 (2013.01); H01S 5/0425 (2013.01); H01S 5/3402 (2013.01); H01S 5/026 (2013.01); H01S 5/227 (2013.01); H01S 5/2224 (2013.01); H01S 5/305 (2013.01); H01S 5/3211 (2013.01); H01S 5/3213 (2013.01);
Abstract

A semiconductor laser includes a substrate having a principal surface; an active region disposed on the principal surface of a substrate, the active region including a quantum well structure, the active region having a top surface, a bottom surface facing the top surface, and side surfaces; an emitter region including a first semiconductor region of a first conductivity type on the top surface of the active region; and a collector region including a second semiconductor region of the first conductivity type on at least one side surface of the active region. The quantum well structure includes unit cells that are arranged in a direction of an axis intersecting the principal surface of the substrate.


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