The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Sep. 21, 2015
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Christian Rumbolz, Lappersdorf, DE;

Sven Gerhard, Alteglofsheim, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01L 21/762 (2006.01); H01S 5/022 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2081 (2013.01); H01L 21/76232 (2013.01); H01S 5/0224 (2013.01); H01S 5/22 (2013.01); H01S 5/2202 (2013.01);
Abstract

A method for patterning a sequence of layers and a semiconductor laser device are disclosed. In an embodiment the method creates at least one trench in the sequence of layers by two plasma etching methods. The semiconductor laser device comprises a sequence of layers including a semiconductor material and two trenches in the sequence of layers. The trenches laterally delimit a ridge waveguide. Each of the trenches is delimited on the side facing away from the ridge waveguide by a region of the sequence of layers.


Find Patent Forward Citations

Rumbolz, Christian. (2019). Method for patterning a sequence of layers and semiconductor laser device (U.S. Patent No. 10312664). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10312664

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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