The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
May. 11, 2017
Applicant:
Skorpios Technologies, Inc., Albuquerque, NM (US);
Inventor:
Damien Lambert, Los Altos, CA (US);
Assignee:
Skorpios Technologies, Inc., Albuquerque, NM (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/022 (2006.01); G02B 6/42 (2006.01); H01L 23/00 (2006.01); G02B 6/136 (2006.01); G02B 6/122 (2006.01); G02B 6/12 (2006.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0226 (2013.01); G02B 6/122 (2013.01); G02B 6/136 (2013.01); G02B 6/4201 (2013.01); H01L 24/03 (2013.01); H01S 5/02268 (2013.01); H01S 5/02296 (2013.01); G02B 2006/12097 (2013.01); H01S 5/0217 (2013.01); H01S 5/0224 (2013.01); H01S 5/02272 (2013.01); H01S 2301/176 (2013.01);
Abstract
A composite semiconductor laser is made by securing a III-V wafer to a transfer wafer. A substrate of the III-V wafer is removed, and the III-V wafer is etched into a plurality of chips while the III-V wafer is secured to the transfer wafer. The transfer wafer is singulated. A portion of the transfer wafer is used as a handle for bonding the chip in a recess of a silicon device. The chip is used as a gain medium for the semiconductor laser.