The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Jun. 05, 2017
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Tae Kyung Won, San Jose, CA (US);
Soo Young Choi, Fremont, CA (US);
Sanjay D. Yadav, San Jose, CA (US);
Carl A. Sorensen, Morgan Hill, CA (US);
Chien-Teh Kao, Sunnyvale, CA (US);
Suhail Anwar, Saratoga, CA (US);
Young Dong Lee, Hwaseong-Si, KR;
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 51/56 (2006.01); H01L 51/52 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/56 (2013.01); H01L 51/0035 (2013.01); H01L 51/0097 (2013.01); H01L 51/5203 (2013.01); H01L 51/5253 (2013.01); H01L 2251/301 (2013.01); H01L 2251/303 (2013.01); H01L 2251/5338 (2013.01);
Abstract
Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.