The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Feb. 29, 2016
Applicant:
Stanley Electric Co., Ltd., Tokyo, JP;
Inventors:
Toshiyuki Obata, Yamaguchi, JP;
Tomoaki Satou, Yamaguchi, JP;
Assignee:
Stanley Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/58 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/06 (2013.01); H01L 33/38 (2013.01); H01L 33/58 (2013.01);
Abstract
A group III nitride semiconductor light emitting element includes an active layer between an n-type layer and a p-type layer, having an n-electrode on the n-type layer and a p-electrode on the p-type layer, and having a mesa structure containing the p-type layer. In a top view of the group III nitride semiconductor light emitting element, the distance between a portion of an end part of the mesa structure and the periphery of the p-electrode is ⅓ or more of a diffusion length L.