The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Dec. 22, 2016
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Nobuaki Matsui, Kyoto, JP;

Hirotaka Obuchi, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); H01L 33/56 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/56 (2013.01); H01L 33/62 (2013.01); H01L 2224/48091 (2013.01);
Abstract

In a light-emitting element (), a light-emitting layer (), a second conductivity type semiconductor layer (), a transparent electrode layer (), a reflecting electrode layer () and an insulating layer () are stacked in this order on a first conductivity type semiconductor layer (), while a first electrode layer () and a second electrode layer () are stacked on the insulating layer () in an isolated state. The light-emitting element () includes a plurality of insulating tube layers (), discretely arranged in plan view, passing through the reflecting electrode layer (), the transparent electrode layer (), the second conductivity type semiconductor layer () and the light-emitting layer () continuously from the insulating layer () and reaching the first conductivity type semiconductor layer (), first contacts (), continuous from the first electrode layer (), connected to the first conductivity type semiconductor layer () through the insulating layer () and the insulating tube layers (), and second contacts (), continuous from the second electrode layer (), passing through the insulating layer () to be connected to the reflecting electrode layer ().


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