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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10312381 B1

PDFFull Text
Date of Patent:
Jun. 04, 2019

Filed:

Mar. 26, 2018

Iii-v semiconductor diode

Applicant:

3-5 Power Electronics Gmbh, Dresden, DE;

Inventor:

Volker Dudek, Ettlingen, DE;

Assignee:

3-5 Power Electronics GmbH, Dresden, DE;

Attorney:

Muncy, Geissler, Olds & Lowe, P.C.

Primary Examiner:

Walter H Swanson

Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/32 (2006.01); H01L 29/861 (2006.01); H01L 29/20 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/18 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 29/20 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/861 (2013.01); H01L 21/02546 (2013.01); H01L 21/187 (2013.01); H01L 21/26546 (2013.01); H01L 21/30625 (2013.01); H01L 29/66204 (2013.01); H01L 29/66212 (2013.01);
Abstract

A stacked III-V semiconductor diode that has an nlayer having a dopant concentration of at least 10N/cm, an nlayer having a dopant concentration of 10N/cmto 10N/cm, a layer thickness of 10 μm to 300 μm, a player having a dopant concentration of 5·10N/cmto 5·10cmand a layer thickness greater than 2 μm, the layers following each other in the specified order, each including a GaAs compound or being made from a GaAs compound and having a monolithic design, the nlayer or the player being a substrate, and a lower side of the nlayer being integrally connected to an upper side of the nlayer. The stacked III-V semiconductor diode including a first defect layer having a layer thickness greater than 0.5 μm, the defect layer being situated within the nlayer.

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