The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Sep. 25, 2017
Applicant:

Toppan Printing Co., Ltd., Taito-ku, JP;

Inventors:

Noriaki Ikeda, Taito-ku, JP;

Makoto Nishizawa, Taito-ku, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); H01L 29/417 (2006.01); H01L 21/283 (2006.01); H01L 29/786 (2006.01); H01L 21/28 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 27/32 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); G02F 1/136 (2013.01); H01L 21/28 (2013.01); H01L 21/283 (2013.01); H01L 21/768 (2013.01); H01L 23/532 (2013.01); H01L 27/1259 (2013.01); H01L 27/3258 (2013.01); H01L 29/41733 (2013.01); H01L 29/6675 (2013.01); H01L 29/786 (2013.01); H01L 27/3274 (2013.01); H01L 51/0545 (2013.01);
Abstract

A thin-film transistor including an insulative substrate, a gate electrode formed on the insulative substrate, a gate insulating layer formed on the substrate and the gate electrode, a source electrode and a drain electrode forming on the gate insulating layer and spaced from each other, a semiconductor layer formed on the gate insulating layer and connected to the source electrode and the drain electrode, a semiconductor protective layer formed on the semiconductor layer, an interlayer insulating film formed on the source electrode, the drain electrode and the semiconductor protective layer, the interlayer insulating film including a fluorine compound, and an upper electrode formed on the interlayer insulating film.


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