The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Feb. 02, 2018
Sanken Electric Co., Ltd., Niiza-Shi, Saitama, JP;
Shunsuke Fukunaga, Saitama, JP;
Taro Kondo, Niiza, JP;
SANKEN ELECTRIC CO., LTD., Niiza-Shi, JP;
Abstract
A semiconductor device may include a device region having one or more active trenches, a field termination region having an edge trench. A depth of the edge trench is larger than a depth of the one or more active trenches. A thickness of an insulation layer in the edge trench is larger than a thickness of an insulation layer in the one or more active trenches. In some embodiments, the first depth is from 1.2 to 2.0 times larger than the second depth, and a first width of the edge trench is 1.5 to 4.0 times larger than a second width of the one or more active trenches. In a cross-sectional view, a gate electrode of the edge trench is laterally offset from the source electrode in a depth direction of the edge trench such that the gate electrode and the source electrode do not overlap.