The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Dec. 06, 2017
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Tetsuya Yamada, Seto, JP;

Takashi Okawa, Nisshin, JP;

Tomohiko Mori, Nagakute, JP;

Hiroyuki Ueda, Nagakute, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 23/535 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/768 (2006.01); H01L 21/308 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 21/0254 (2013.01); H01L 21/26546 (2013.01); H01L 21/308 (2013.01); H01L 21/30612 (2013.01); H01L 21/30625 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 29/063 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66068 (2013.01); H01L 29/66522 (2013.01); H01L 29/66712 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01);
Abstract

A switching element includes a semiconductor substrate that includes a first n-type semiconductor layer, a p-type body layer constituted by an epitaxial layer, and a second n-type semiconductor layer separated from the first n-type semiconductor layer by the body layer, a gate insulating film that covers a range across the surface of the first n-type semiconductor layer, the surface of the body layer, and the surface of the second n-type semiconductor layer, and a gate electrode that faces the body layer through the gate insulating film. An interface between the first n-type semiconductor layer and the body layer includes an inclined surface. The inclined surface is inclined such that the depth of the body layer increases as a distance from an end of the body layer increases in a horizontal direction. The inclined surface is disposed below the gate electrode.


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