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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10312360 B1

PDFFull Text
Date of Patent:
Jun. 04, 2019

Filed:

Jan. 23, 2017

Method for producing trench high electron mobility devices

Applicant:

Stephen P. Barlow, Carmel, IN (US);

Inventor:

Stephen P. Barlow, Carmel, IN (US);

Assignee:

Other;

Attorneys:

C. John Brannon

Brannon Sowers & Cracraft PC

Primary Examiner:

Sophia T Nguyen

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 21/306 (2006.01); H01L 29/267 (2006.01); H01L 29/417 (2006.01); H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 21/8258 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/30608 (2013.01); H01L 21/324 (2013.01); H01L 29/045 (2013.01); H01L 29/1095 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/267 (2013.01); H01L 29/41741 (2013.01); H01L 29/66462 (2013.01); H01L 29/66681 (2013.01); H01L 29/7788 (2013.01); H01L 29/7789 (2013.01); H01L 29/7816 (2013.01); H01L 21/26546 (2013.01); H01L 21/8258 (2013.01); H01L 29/452 (2013.01); H01L 2924/13064 (2013.01);
Abstract

A method for producing a solid state device, including forming a first dielectric layer over an epitaxial layer at least partially covering the a silicon substrate and depositing a photoresist material there-over, removing a predetermined portion first dielectric layer to define an exposed portion, implanting dopants into the exposed portion to define a doped portion, preferentially removing silicon from the exposed portion to generate trenches having V-shaped cross-sections and having first and second angled sidewalls defining the V-shaped cross-section, wherein each angled sidewall defining the V-shaped cross-section is a silicon face having a 111 orientation, and forming a 2DEG on at least one sidewall.

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