The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Jun. 20, 2018
Heterojunction bipolar transistors with multiple emitter fingers and undercut extrinsic base regions
Globalfoundries Inc., Grand Cayman, KY;
Qizhi Liu, Lexington, MA (US);
Vibhor Jain, Essex Junction, VT (US);
James W. Adkisson, Jericho, VT (US);
Sarah McTaggart, Essex Junction, VT (US);
Mark Levy, Williston, VT (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Device structures and fabrication methods for heterojunction bipolar transistors. Trench isolation regions are arranged to surround a plurality of active regions, and a collector is located in each of the active regions. A base layer includes a plurality of first sections that are respectively arranged over the active regions and a plurality of second sections that are respectively arranged over the trench isolation regions. The first sections of the base layer contain single-crystal semiconductor material, and the second sections of the base layer contain polycrystalline semiconductor material. The second sections of the base layer are spaced in a vertical direction from the trench isolation regions to define a plurality of cavities. A plurality of emitter fingers are respectively arranged on the first sections of the base layer.