The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Dec. 06, 2017
Applicant:
The Board of Regents of the University of Texas System, Austin, TX (US);
Inventors:
Jack C. Lee, Austin, TX (US);
Han Zhao, Austin, TX (US);
Assignee:
The Board of Regents of the University of Texas System, Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); H01L 29/0653 (2013.01); H01L 29/0895 (2013.01); H01L 29/66742 (2013.01); H01L 29/78609 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01);
Abstract
A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide region operates to reduce a tunneling effect in a tunnel region underlying a drain region, during an OFF-state of the TFET. The reduction in tunneling effect results in a reduction or elimination of a flow of OFF-state leakage current between the source region and the drain region. The TFET may have components made from group III-V compound materials.