The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Jul. 26, 2016
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventor:

Shigemi Miyazawa, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/866 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 27/06 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66106 (2013.01); H01L 27/0629 (2013.01); H01L 27/0727 (2013.01); H01L 29/66333 (2013.01); H01L 29/7395 (2013.01); H01L 29/866 (2013.01);
Abstract

A device includes a vertical semiconductor switch including (i) a gate terminal and a first terminal provided on a substrate and (ii) a second terminal provided on the substrate, where the vertical semiconductor switch is configured to electrically connect or disconnect the first terminal and the second terminal, a first insulative film provided on the substrate, a second insulative film provided on the substrate, where the second insulative film is in contact with the first insulative film and thinner than the first insulative film, and a zener diode formed on the first insulative film and the second insulative film, where the zener diode includes a first portion that is formed on the first insulative film and connected to the first surface of the substrate and a second portion that is formed on the second insulative film and connected to the gate terminal.


Find Patent Forward Citations

Miyazawa, Shigemi. (2019). Device and device manufacturing method (U.S. Patent No. 10312343). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10312343

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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