The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Jun. 01, 2016
Fuji Electric Co., Ltd., Kanagawa, JP;
Hiroki Wakimoto, Matsumoto, JP;
Hiroshi Takishita, Matsumoto, JP;
Takashi Yoshimura, Matsumoto, JP;
Takahiro Tamura, Matsumoto, JP;
Yuichi Onozawa, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A semiconductor device comprises: an n-type semiconductor substrate; a p-type anode region formed in the semiconductor substrate on its front surface side; an n-type field stop region formed in the semiconductor substrate on its rear surface side with protons as a donor; and an n-type cathode region formed in the semiconductor substrate to be closer to its rear surface than the field stop region is, wherein a concentration distribution of the donor in the field stop region in its depth direction has a first peak, and a second peak that is closer to the rear surface of the semiconductor substrate than the first peak is, and has a concentration lower than that of the first peak, and a carrier lifetime in at least a partial region between the anode region and the cathode region is longer than carrier lifetimes in the anode region.