The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Apr. 25, 2018
Applicant:

Lapis Semiconductor Co., Ltd., Kanagawa, JP;

Inventor:

Hiroki Kasai, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/119 (2006.01); H01L 27/146 (2006.01); G01T 1/24 (2006.01); H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14658 (2013.01); G01T 1/24 (2013.01); H01L 27/14659 (2013.01); H01L 31/02005 (2013.01); H01L 31/022408 (2013.01); H01L 31/085 (2013.01); H01L 31/119 (2013.01);
Abstract

A semiconductor device including a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer.


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