The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Mar. 17, 2017
Applicant:
Toshiba Memory Corporation, Minato-ku, JP;
Inventor:
Takeshi Sonehara, Yokkaichi, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/1157 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01);
Abstract
A semiconductor memory device according to an embodiment includes a stacked body in which an electrode film and an insulating film are alternately stacked along a first direction, a semiconductor member extending in the first direction and piercing the stacked body, and a charge storage member provided between the semiconductor member and the electrode film. The electrode film includes a first portion. The first portion is composed of a metal silicide. The first portion surrounds the semiconductor member as viewed from the first direction.