The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Sep. 14, 2017
Toshiba Memory Corporation, Minato-ku, JP;
Tsutomu Tezuka, Yokohama, JP;
Fumitaka Arai, Yokkaichi, JP;
Keiji Ikeda, Kawasaki, JP;
Tomomasa Ueda, Yokohama, JP;
Nobuyoshi Saito, Tokyo, JP;
Chika Tanaka, Fujisawa, JP;
Kentaro Miura, Kawasaki, JP;
Toshiba Memory Corporation, Minato-ku, JP;
Abstract
According to one embodiment, a memory includes: a bit line; a source line; a pillar extending in a first direction and including an oxide semiconductor layer; first, second and third layers arranged along the first direction and opposed to a side of the pillar; a memory cell at an intersection between the first layer and the pillar, the memory cell including a charge storage layer in the oxide semiconductor layer; a first transistor at an intersection between the second layer and the pillar; and a second transistor at an intersection between the third layer and the pillar. A first end of the oxide semiconductor layer in the first direction is in contact with the source line, and a second end of the oxide semiconductor layer in the first direction is electrically disconnected from the bit line.