The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Nov. 02, 2016
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Takuya Kadoguchi, Toyota, JP;

Naoya Take, Toyota, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); B23K 35/00 (2006.01); H01L 25/07 (2006.01); H01L 23/433 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 24/27 (2013.01); B23K 35/00 (2013.01); H01L 23/4334 (2013.01); H01L 23/49513 (2013.01); H01L 23/49537 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 23/49582 (2013.01); H01L 24/05 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 25/072 (2013.01); H01L 23/49551 (2013.01); H01L 24/33 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/27334 (2013.01); H01L 2224/27436 (2013.01); H01L 2224/27849 (2013.01); H01L 2224/291 (2013.01); H01L 2224/293 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29211 (2013.01); H01L 2224/29294 (2013.01); H01L 2224/29347 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32227 (2013.01); H01L 2224/32503 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/83447 (2013.01); H01L 2224/83815 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/3651 (2013.01);
Abstract

A method of manufacturing a semiconductor device which includes a first member and a second member joined to the first member includes: a) producing (Cu,Ni)Snon a Ni film formed on the first member by melting a first Sn—Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the first member; b) producing (Cu,Ni)Snon a Ni film formed on the second member by melting a second Sn—Cu solder containing 0.9 wt % or higher of Cu on the Ni film of the second member; and c) joining the first member and the second member to each other by melting the first Sn—Cu solder having undergone step a) and the second Sn—Cu solder having undergone step b) so that the first Sn—Cu solder and the second Sn—Cu solder become integrated.


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