The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Apr. 05, 2018
The United States of America, As Represented BY the Secretary of the Navy, Washington, DC (US);
Karl D. Hobart, Alexandria, VA (US);
Andrew D. Koehler, Alexandria, VA (US);
Francis J. Kub, Arnold, MD (US);
Travis J. Anderson, Alexandria, VA (US);
Tatyana I. Feygelson, Springfield, VA (US);
Marko J. Tadjer, Springfield, VA (US);
Lunet E. Luna, Wheaton, MD (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A device structure and method for improving thermal management in highly scaled, high power electronic and optoelectronic devices such as GaN FET and AlGaN/GaN HEMT devices by implementing diamond air bridges into such devices to remove waste heat. The diamond air bridge can be formed from a polycrystalline diamond material layer which can be grown on the surface of a dielectric material layer, on the surface of a III-nitride material, or on the surface of a diamond polycrystalline nucleation layer, and may be optimized to have a high thermal conductivity at the growth interface with the underlying material.