The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Mar. 07, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Kyungin Choi, Seoul, KR;

Ah-Young Cheon, Suwon-si, KR;

Kwang-Yong Yang, Seoul, KR;

Myungil Kang, Yongin-si, KR;

Dohyoung Kim, Hwaseong-si, KR;

YoonHae Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 27/092 (2006.01); H01L 29/165 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 21/26586 (2013.01); H01L 29/165 (2013.01);
Abstract

Semiconductor devices are providing including a first isolation region configured to define a first fin active region protruding from a substrate, first gate patterns on the first fin active region, and a first epitaxial region in the first fin active region between the first gate patterns. Sidewalls of the first epitaxial region have first inflection points so that an upper width of the first epitaxial region is greater than a lower width of the first epitaxial region.


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