The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Nov. 28, 2016
Applicants:

Christopher F. Kirby, Gambrills, MD (US);

Michael Rennie, Ashland, VA (US);

Daniel J. O'donnell, Manassas, VA (US);

Sandro J. Di Giacomo, Ellicott City, MD (US);

Inventors:

Christopher F. Kirby, Gambrills, MD (US);

Michael Rennie, Ashland, VA (US);

Daniel J. O'Donnell, Manassas, VA (US);

Sandro J. Di Giacomo, Ellicott City, MD (US);

Assignee:

NORTHROP GRUMMAN SYSTEMS CORPORATION, Falls Church, VA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 23/66 (2006.01); H01L 39/12 (2006.01); H01L 39/24 (2006.01); H01P 3/08 (2006.01); H01P 11/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76891 (2013.01); H01L 21/02063 (2013.01); H01L 21/0273 (2013.01); H01L 21/02074 (2013.01); H01L 21/31116 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/7685 (2013.01); H01L 21/76802 (2013.01); H01L 21/76814 (2013.01); H01L 21/76849 (2013.01); H01L 21/76877 (2013.01); H01L 21/76883 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53285 (2013.01); H01L 23/66 (2013.01); H01L 39/12 (2013.01); H01L 39/2406 (2013.01); H01P 3/081 (2013.01); H01P 11/003 (2013.01); H01L 2223/6627 (2013.01);
Abstract

A method of forming a superconductor structure is provided. The method comprises forming a superconducting element in a first dielectric layer that has a top surface aligned with the top surface of the first dielectric layer, forming a second dielectric layer over the first dielectric layer and the superconducting element, and forming an opening in the second dielectric layer to a top surface of the superconducting element. The method also comprises performing a cleaning process on the top surface of the superconducting element to remove oxides formed on the top surface of the superconducting element at a first processing stage, forming a protective barrier over the top surface of the superconducting element, and moving the superconductor structure to a second processing stage for further processing.


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