The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Dec. 29, 2017
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Ward Parkinson, Boise, ID (US);

Thomas Michael Trent, Tucson, AZ (US);

James Edwin O'Toole, Boise, ID (US);

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/12 (2006.01); G11C 8/08 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 7/06 (2013.01); G11C 8/08 (2013.01);
Abstract

A bit line read voltage generator may operate in a high drive strength or current mode to drive a selected bit line voltage to a read selected bit line voltage at a high level, and then may switch to operating in a low drive strength or current mode. Doing so may control, such as by limiting, the amount of cell current if the selected memory cell turns on, reducing the likelihood of false writes. Also, a word line read voltage generator may operate in a high drive strength or current mode to ramp up a selected word line voltage level, and then may switch to operating in a low drive strength or current mode to shorten the time for a global selected word line voltage to decrease to below a trip level and/or to control an amount of the cell current when the selected memory cell turns on.


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