The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Apr. 29, 2016
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Nadine Collaert, Blanden, BE;

Voon Yew Thean, Tervuren, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); H01L 21/265 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4145 (2013.01); G01N 27/414 (2013.01); H01L 21/26586 (2013.01); H01L 29/42356 (2013.01); H01L 29/6653 (2013.01);
Abstract

The disclosed technology relates generally to semiconductor devices, and more particularly to semiconductor devices such as field-effect transistor devices configured for biomolecule sensing. In one aspect, a semiconductor chip comprises at least one field-effect transistor device which comprises a source, a drain, a gate stack and a channel region formed between the source and the drain. The gate stack only partially overlaps the channel region at the source side and/or at the drain side, such that a non-overlapped channel region at the source side and/or at the drain side is formed, where the non-overlapped channel region is configured for sensing biomolecules.


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