The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2019

Filed:

Mar. 01, 2018
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventor:

Osamu Nagano, Nagoya Aichi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/26 (2006.01); H01J 37/28 (2006.01); H01J 37/244 (2006.01); G01N 23/2251 (2018.01);
U.S. Cl.
CPC ...
G01N 23/2251 (2013.01); H01J 37/244 (2013.01); H01J 37/265 (2013.01); H01J 37/28 (2013.01); H01J 2237/24514 (2013.01); H01J 2237/2817 (2013.01);
Abstract

A pattern inspection method includes scanning a plurality of patterns on a substrate with N charged particle beams and detecting secondary electrons respectively generated from each of the plurality of patterns to acquire N SEM images, determining a distribution of gray level values for each of the acquired N SEM images, selecting M gray levels from the distributions of the N gray levels, selecting a first gray level value from a first one of the M distributions, and comparing it to the corresponding first gray level value of the of the other M−1 distributions, and determining that an abnormality has occurred in the charged particle beam corresponding to the first one of the M distributions when the difference between the first value of the first one of the M distributions and the other M−1 distributions is greater than a predetermined threshold value.


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