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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10309011 B1

PDFFull Text
Date of Patent:
Jun. 04, 2019

Filed:

Jul. 28, 2016

Method for manufacturing two-dimensional transition metal dichalcogemide thin film

Applicant:

Korea Research Institute of Standards and Science, Daejeon, KR;

Inventors:

Sang Woo Kang, Daejeon, KR;

Ji Hun Mun, Daejeon, KR;

Assignee:

Korea Research Institute of Standards and Science, Daejeon, KR;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Michael P Wieczorek

Assistant Examiner:

Michael G Miller

Int. Cl.
CPC ...
C01B 17/20 (2006.01); C01G 39/06 (2006.01); C23C 16/02 (2006.01); C23C 16/30 (2006.01); C23C 16/52 (2006.01); C30B 25/16 (2006.01); C30B 25/18 (2006.01); C30B 29/46 (2006.01); C30B 29/64 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/305 (2013.01); C01B 17/20 (2013.01); C01G 39/06 (2013.01); C23C 16/0227 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); C23C 16/45555 (2013.01); C23C 16/52 (2013.01); C30B 25/16 (2013.01); C30B 25/186 (2013.01); C30B 29/46 (2013.01); C30B 29/64 (2013.01); C01P 2002/82 (2013.01); C01P 2002/85 (2013.01); C01P 2004/03 (2013.01); C01P 2004/04 (2013.01);
Abstract

The present invention relates to a method for preparing a two-dimensional transition metal dichalcogenide and, more particularly, to a method for preparing a highly uniform two-dimensional transition metal dichalcogenide thin film. More specifically, the present invention is directed to a preparation method for a highly uniform two-dimensional transition metal dichalcogenide thin film at low temperature of 500° C. or below.

Find Patent Forward Citations

Kang, Sang. (2019). Method for manufacturing two-dimensional transition metal dichalcogemide thin film (U.S. Patent No. 10309011). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10309011

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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