The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Oct. 09, 2015
Applicant:
Tokuyama Corporation, Yamaguchi, JP;
Inventors:
Kazuhiro Kawaguchi, Yamaguchi, JP;
Masami Fujii, Yamaguchi, JP;
Sho Uchida, Yamaguchi, JP;
Manabu Kondo, Yamaguchi, JP;
Yoshifumi Mito, Yamaguchi, JP;
Nobuaki Yoshimatsu, Yamaguchi, JP;
Assignee:
Tokuyama Corporation, Yamaguchi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03B 37/10 (2006.01); B02C 1/04 (2006.01); C01B 33/02 (2006.01); B02C 23/10 (2006.01); C30B 15/02 (2006.01); B02C 23/30 (2006.01);
U.S. Cl.
CPC ...
B02C 1/04 (2013.01); B02C 23/10 (2013.01); B02C 23/30 (2013.01); C01B 33/02 (2013.01); C30B 15/02 (2013.01); C01P 2004/60 (2013.01); C01P 2006/80 (2013.01);
Abstract
Polycrystalline silicon fragments obtained by fracturing polycrystalline silicon blocks wherein a content ratio of polycrystalline silicon powder having a particle size of 500 to 1000 μm is 0.1 to 40 ppmw.
Kawaguchi, Kazuhiro. (2019). Polycrystalline silicon fragment, method for manufacturing polycrystalline silicon fragment, and polycrystalline silicon block fracture device (U.S. Patent No. 10307763). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10307763
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile