The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10306770 B1

PDF
Full Text
Expired
Date of Patent:
May. 28, 2019

Filed:

Mar. 11, 2015
Applicant:

Noda Screen Co., Ltd., Aichi, JP;

Inventor:

Atsunori Hattori, Komaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/49 (2006.01); H05K 3/30 (2006.01); H01G 4/33 (2006.01); H01G 4/38 (2006.01); H05K 3/46 (2006.01); H01L 23/64 (2006.01); H01L 49/02 (2006.01); H05K 1/02 (2006.01); H05K 1/16 (2006.01); H05K 3/00 (2006.01); H05K 3/32 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H05K 3/303 (2013.01); H01G 4/33 (2013.01); H01G 4/38 (2013.01); H01L 21/4857 (2013.01); H01L 23/49822 (2013.01); H01L 23/642 (2013.01); H01L 28/60 (2013.01); H05K 1/0298 (2013.01); H05K 1/162 (2013.01); H05K 3/002 (2013.01); H05K 3/32 (2013.01); H05K 3/46 (2013.01); H01L 23/49816 (2013.01); H01L 23/49827 (2013.01); H01L 23/49833 (2013.01); H01L 2224/16225 (2013.01); H01L 2924/15174 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A method for manufacturing a thin-film capacitor in a circuit substrate includes: forming, on a dielectric film formed on a surface of a support member, a first electrode layer of the thin-film capacitor; forming, on the dielectric film and the first electrode layer, an insulating base material of the circuit substrate so as to bury the first electrode layer; removing the support member and exposing a surface of the dielectric film on a side opposite to the first electrode layer; patterning the dielectric film so as to leave a dielectric layer overlapping the first electrode layer; forming a first through hole in the dielectric layer so as to expose a part of a surface, on a dielectric layer side, of the first electrode layer; and forming a second electrode layer of the capacitor so as to overlap the dielectric layer including the inside of the first through hole.


Find Patent Forward Citations

Hattori, Atsunori. (2019). Thin-film capacitor manufacturing method, integrated circuit mounting substrate, and semiconductor device equipped with the substrate (U.S. Patent No. 10306770). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10306770

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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