The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Oct. 27, 2011
Michael Jason Grundmann, Eindhoven, NL;
Nathan Frederick Gardner, Eindhoven, NL;
Werner Karl Goetz, Eindhoven, NL;
Melvin Barker Mclaurin, Eindhoven, NL;
John Edward Epler, Eindhoven, NL;
Francisco Alexander Leon, Eindhoven, NL;
Michael Jason Grundmann, Eindhoven, NL;
Nathan Frederick Gardner, Eindhoven, NL;
Werner Karl Goetz, Eindhoven, NL;
Melvin Barker McLaurin, Eindhoven, NL;
John Edward Epler, Eindhoven, NL;
Francisco Alexander Leon, Eindhoven, NL;
Lumileds LLC, San Jose, CA (US);
Abstract
A device includes a substrate () and a III-nitride structure () grown on the substrate, the III-nitride structure comprising a light emitting layer () disposed between an n-type region () and a p-type region (). The substrate is a RA0(MO)where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer≥1. The substrate has an inplane lattice constant a. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant asuch that [(|a−a|)/a]*100% is no more than 1%.