The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Mar. 16, 2018
Applicant:

Alliance for Sustainable Energy, Llc, Golden, CO (US);

Inventors:

David Scott Albin, Denver, CO (US);

Wyatt Keith Metzger, Louisville, CO (US);

James Michael Burst, Lakewood, CO (US);

Eric Michael Colegrove, Denver, CO (US);

Joel Nathan Duenow, Golden, CO (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1828 (2013.01); H01L 21/0248 (2013.01); H01L 21/02422 (2013.01); H01L 21/02491 (2013.01); H01L 21/02502 (2013.01); H01L 21/02513 (2013.01); H01L 21/02562 (2013.01); H01L 21/02595 (2013.01); H01L 21/02631 (2013.01); H01L 21/02634 (2013.01); H01L 21/02694 (2013.01); H01L 31/1836 (2013.01); H01L 31/1864 (2013.01); H01L 31/1868 (2013.01);
Abstract

Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of a semiconductor material; treating the small-grain layer such that the small-grain layer becomes a large-grain layer; and growing an epitaxial layer of the semiconductor material on the large-grain layer. A ratio of an average grain size of the small-grain layer to a thickness of the small-grain layer is less than 1.0, and a ratio of an average grain size of the large-grain layer to a thickness of the large-grain layer is greater than 1.5.


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