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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10304984 B1

PDFFull Text
Date of Patent:
May. 28, 2019

Filed:

Sep. 07, 2012

Heterojunction photovoltaic device and fabrication method

Applicants:

Stephen W. Bedell, Wappingers Falls, NY (US);

Keith E. Fogel, Hopewell Junction, NY (US);

Bahman Hekmatshoar-tabari, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Ghavam G. Shahidi, Pound Ridge, NY (US);

Davood Shahrjerdi, White Plains, NY (US);

Inventors:

Stephen W. Bedell, Wappingers Falls, NY (US);

Keith E. Fogel, Hopewell Junction, NY (US);

Bahman Hekmatshoar-Tabari, White Plains, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Ghavam G. Shahidi, Pound Ridge, NY (US);

Davood Shahrjerdi, White Plains, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Erik Johnson

Primary Examiner:

Andrew J Golden

Int. Cl.
CPC ...
H01L 31/074 (2012.01); H01L 31/078 (2012.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0725 (2012.01); H01L 31/0747 (2012.01); C23C 14/34 (2006.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); C23C 14/3407 (2013.01); H01L 31/02167 (2013.01); H01L 31/022441 (2013.01); H01L 31/074 (2013.01); H01L 31/078 (2013.01); H01L 31/0747 (2013.01); H01L 31/1808 (2013.01); H01L 31/1812 (2013.01); H01L 31/204 (2013.01); Y02E 10/50 (2013.01); Y02P 70/521 (2015.11);
Abstract

A photovoltaic device and method include a doped germanium-containing substrate, an emitter contact coupled to the substrate on a first side and a back contact coupled to the substrate on a side opposite the first side. The emitter includes at least one doped layer of an opposite conductivity type as that of the substrate and the back contact includes at least one doped layer of the same conductivity type as that of the substrate. The at least one doped layer of the emitter contact or the at least one doped layer of the back contact is in direct contact with the substrate, and the at least one doped layer of the emitter contact or the back contact includes an n-type material having an electron affinity smaller than that of the substrate, or a p-type material having a hole affinity larger than that of the substrate.

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