The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Apr. 22, 2015
Applicants:

Peidong Yang, Kensington, CA (US);

Chong Liu, Cambridge, MA (US);

Jinyao Tang, Emeryville, CA (US);

Hao Ming Chen, Taipei, TW;

Bin Liu, Albany, CA (US);

Inventors:

Peidong Yang, Kensington, CA (US);

Chong Liu, Cambridge, MA (US);

Jinyao Tang, Emeryville, CA (US);

Hao Ming Chen, Taipei, TW;

Bin Liu, Albany, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); C25B 1/00 (2006.01); C25B 3/04 (2006.01); C25B 9/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); C25B 1/003 (2013.01); C25B 3/04 (2013.01); C25B 9/18 (2013.01); H01L 31/035272 (2013.01); H01L 31/035281 (2013.01);
Abstract

This disclosure provides systems, methods, and apparatus related to solar water splitting. In one aspect, a structure includes a plurality of first nanowires, the plurality of first nanowires comprising an n-type semiconductor or a p-type semiconductor. The structure further includes a second nanowire, the second nanowire comprising the n-type semiconductor or the p-type semiconductor, the second nanowire being a different composition than the plurality of first nanowires. The second nanowire includes a first region and a second region, with the first region having a conductive layer disposed thereon, and each of the plurality of first nanowires being disposed on the conductive layer.


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