The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Feb. 18, 2016
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Tsuneo Ogura, Kamakura Kanagawa, JP;

Tomoko Matsudai, Shibuya Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/868 (2006.01); H01L 29/872 (2006.01); H01L 27/07 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/868 (2013.01); H01L 27/0727 (2013.01); H01L 29/0619 (2013.01); H01L 29/407 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01); H01L 29/0692 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01);
Abstract

According to one embodiment, in a semiconductor device, The first semiconductor region is provided between the first and the second electrode. The second semiconductor region is provided between the first semiconductor region and the second electrode. The first and second connection region are electrically connected to the second electrode, reaches the first semiconductor region. The first insulating film is provided between the first connection region and the second semiconductor region and between the first connection region and the first semiconductor region. The second insulating film is provided between the second connection region and the second semiconductor region and between the second connection region and the first semiconductor region. The third connection region is provided between the first connection region and the second connection region, the third connection region is electrically connected to the second electrode, reaches the first semiconductor region or reaches the second semiconductor region.


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