The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Apr. 24, 2018
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Sangsu Woo, Incheon, KR;
Jongho Park, Incheon, KR;
SeWoon Kim, Bucheon, KR;
SangYong Lee, Incheon, KR;
Youngkwon Kang, Bucheon, KR;
Assignee:
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 21/321 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 21/28035 (2013.01); H01L 21/3212 (2013.01); H01L 29/0649 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract
A transistor includes a trench defined in a semiconductor substrate. A gate electrode is disposed in the trench and insulated from a sidewall of the trench by a gate dielectric. A shield electrode is disposed in the trench below the gate electrode and insulated from the gate electrode and the sidewall of the trench by a shield dielectric. The shield dielectric includes solid dielectric portions and a cavity disposed between the shield electrode and the sidewall of the trench.