The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Dec. 04, 2017
Applicants:
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;
Inventor:
Ryo Wada, Tokyo, JP;
Assignees:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/22 (2006.01); H01L 29/73 (2006.01); H01L 29/78 (2006.01); H01L 21/324 (2006.01); H01L 29/861 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/221 (2013.01); H01L 21/324 (2013.01); H01L 29/7394 (2013.01); H01L 29/7824 (2013.01); H01L 29/861 (2013.01);
Abstract
According to one embodiment, a hydrogen concentration of a bottom part in a vicinity of a boundary with the insulating layer in the first silicon layer is higher than a hydrogen concentration of a part above the bottom part in the first silicon layer. And a resistivity of the bottom part in the first silicon layer is lower than a resistivity of the part above the bottom part in the first silicon layer.