The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Feb. 01, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Kazuhiro Matsuo, Kuwana, JP;

Masayuki Tanaka, Yokkaichi, JP;

Shinji Mori, Yokkaichi, JP;

Kenichiro Toratani, Kuwana, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/792 (2006.01); H01L 27/11582 (2017.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/115 (2013.01); H01L 28/00 (2013.01); H01L 29/792 (2013.01);
Abstract

A semiconductor memory device according to an embodiment includes a substrate, a stacked body provided on the substrate, a plurality of electrode films being stacked to be separated from each other in the stacked body, a semiconductor pillar piercing the plurality of electrode films, a first insulating film provided between the semiconductor pillar and the electrode films, a second insulating film provided between the semiconductor pillar and the first insulating film; and a third insulating film provided between the first insulating film and the electrode films. The first insulating film includes silicon, nitrogen, oxygen, and carbon.


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