The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Dec. 12, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hyo Jin Kim, Bucheon-si, KR;
Kwan Young Chun, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a cell region that includes a first active region and a second active region extending in a first direction and a separation region between the first active region and the second active region. The cell region has a first width. A first gate structure and a second gate structure are disposed on the cell region, are spaced apart from each other in the first direction, and extend in the second direction. A first metal line and a second metal line are disposed on the cell region, extend in the first direction, and are spaced apart from each other by a first pitch. Each of the first and second metal lines has a second width. A first gate contact electrically connects the first gate structure and the first metal line. At least a portion of the first gate contact overlaps the separation region. A second gate contact electrically connects the second gate structure and the second metal line. At least a portion of the second gate contact overlaps the separation region. The first width divided by a sum of the first pitch and the second width is six or less.