The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Dec. 17, 2015
Applicant:

Glo Ab, Lund, SE;

Inventors:

Nathan Gardner, Sunnyvale, CA (US);

Fredrick A. Kish, Jr., Sunnyvale, CA (US);

Miljenko Modric, Santa Clara, CA (US);

Anusha Pokhriyal, Sunnyvale, CA (US);

Daniel Thompson, Palo Alto, CA (US);

Fariba Danesh, Pleasanton, CA (US);

Assignee:

GLO AB, Lund, SE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 25/16 (2006.01); H01L 27/15 (2006.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 33/00 (2010.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 21/6835 (2013.01); H01L 24/97 (2013.01); H01L 25/167 (2013.01); H01L 27/156 (2013.01); H01L 33/0079 (2013.01); H01L 33/62 (2013.01); H01L 25/50 (2013.01); H01L 33/0095 (2013.01); H01L 2221/68322 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/81 (2013.01); H01L 2224/81001 (2013.01); H01L 2224/95 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first light emitting devices is bonded to the first conductive bonding structures. Laser irradiation can be employed to selectively disconnect the first subset of the first light emitting devices from the first transfer substrate while a second subset of the first light emitting devices remains attached to the first transfer substrate. Additional devices on each additional transfer substrate can be bonded to additional conductive bonding structures on the backplane employing the same method provided that the additional devices are not present in positions that would overlap with pre-existing first light emitting devices or devices on the backplane at a bonding position.


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