The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Jan. 25, 2017
Applicant:

Omron Corporation, Kyoto-shi, Kyoto, JP;

Inventors:

Takeo Nishikawa, Kyoto, JP;

Takayoshi Tawaragi, Kitakatsuragi-gun, JP;

Eiichi Omura, Nara, JP;

Assignee:

OMRON Corporation, Kyoto-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/40 (2006.01); H01L 23/36 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4006 (2013.01); H01L 23/36 (2013.01); H01L 23/40 (2013.01); H01L 23/49827 (2013.01); H01L 2023/4018 (2013.01); H01L 2023/4068 (2013.01); H01L 2023/4087 (2013.01);
Abstract

A heat dissipation structure of a semiconductor device is provided, the semiconductor device including: an electrical bonding surface electrically connected to a substrate; and a heat dissipation surface as an opposite side of the electrical bonding surface. The heat dissipation surface makes contact with a heat spreader via a conductive TIM while the heat spreader makes contact with a heat sink via an insulating TIM. A surface of the heat spreader facing the semiconductor device includes a recess part formed in at least one part in a vicinity of an outer periphery of the semiconductor device.


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