IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10304739 B1

PDFFull Text
Date of Patent:
May. 28, 2019

Filed:

Jan. 15, 2016

Method for manufacturing semiconductor substrate, semiconductor substrate, method for manufacturing combined semiconductor substrate, combined semiconductor substrate, and semiconductor-joined substrate

Applicant:

Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;

Inventors:

Yoshiki Nishibayashi, Itami, JP;

Kazuo Nakamae, Itami, JP;

Assignee:

SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;

Attorney:

Drinker Biddle & Reath LLP

Primary Examiner:

Thinh T Nguyen

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/78 (2006.01); C30B 25/18 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/22 (2006.01); H01L 29/34 (2006.01); H01L 21/20 (2006.01); H01L 21/268 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7813 (2013.01); C30B 25/18 (2013.01); H01L 21/02 (2013.01); H01L 21/02002 (2013.01); H01L 21/0254 (2013.01); H01L 21/0256 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02409 (2013.01); H01L 21/02433 (2013.01); H01L 21/02527 (2013.01); H01L 21/02529 (2013.01); H01L 21/02557 (2013.01); H01L 21/02631 (2013.01); H01L 21/02658 (2013.01); H01L 21/2007 (2013.01); H01L 21/268 (2013.01); H01L 21/7806 (2013.01); H01L 29/1602 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/22 (2013.01); H01L 29/34 (2013.01);
Abstract

A method for manufacturing a semiconductor substrate according to the present invention includes preparing a seed substrate containing a semiconductor material, forming an ion implanted layer at a certain depth from a front surface of a main surface of the seed substrate by implanting ions into the seed substrate, growing a semiconductor layer on the main surface of the seed substrate with a vapor-phase synthesis method, and separating a semiconductor substrate including the semiconductor layer and a part of the seed substrate by irradiating the front surface of the main surface of at least any of the semiconductor layer and the seed substrate with light.

Find Patent Forward Citations

Loading…