The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Feb. 18, 2016
Applicant:

Vladimir Gorokhovsky, Lafayette, CO (US);

Inventor:

Vladimir Gorokhovsky, Lafayette, CO (US);

Assignee:

Nano-Product Engineering, LLC, Lafayette, CO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/27 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); C23C 16/442 (2006.01); C23C 14/32 (2006.01); C23C 14/50 (2006.01); C23C 14/06 (2006.01); C23C 14/22 (2006.01); C23C 14/35 (2006.01); C23C 14/56 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/26 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32633 (2013.01); C23C 14/0605 (2013.01); C23C 14/0641 (2013.01); C23C 14/22 (2013.01); C23C 14/223 (2013.01); C23C 14/325 (2013.01); C23C 14/35 (2013.01); C23C 14/50 (2013.01); C23C 14/564 (2013.01); C23C 16/029 (2013.01); C23C 16/045 (2013.01); C23C 16/26 (2013.01); C23C 16/27 (2013.01); C23C 16/342 (2013.01); C23C 16/442 (2013.01); C23C 16/458 (2013.01); C23C 16/45591 (2013.01); C23C 16/50 (2013.01); H01J 37/32055 (2013.01); H01J 37/3266 (2013.01); H01J 37/32357 (2013.01); H01J 37/32522 (2013.01); H01J 37/32532 (2013.01); H01J 37/32614 (2013.01); H01J 37/32715 (2013.01); H01J 37/32816 (2013.01); H01J 37/3402 (2013.01); H01J 37/3405 (2013.01); H01J 37/3447 (2013.01); H01J 37/3458 (2013.01); H01J 2237/332 (2013.01);
Abstract

A reactor for plasma-assisted chemical vapor deposition includes a plasma duct for containing one or more substrates to be coated by ions; an arc discharge generation system for generating a flow of electrons through the plasma duct from a proximal end toward a distal end of the plasma duct; a gas inlet coupled to the distal end for receiving a reactive gas; a gas outlet coupled to the proximal end for removing at least a portion of the reactive gas to generate a flow of the reactive gas through the plasma duct from the distal end toward the proximal end, to generate the ions from collisions between the electrons and the reactive gas; and a separating baffle positioned for restricting flow of the reactive gas out of the plasma duct to maintain a high pressure in the plasma duct to increase rate of deposition of the ions onto the substrates.


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