The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Jan. 25, 2017
Bor-ruey Chen, Taipei, TW;
Bor-Ruey Chen, Taipei, TW;
Other;
Abstract
Herein is disclosed a quantum cell from top to down including: an N-type ohmic contact electrode, an N-type π-orbital semiconductor substrate, an N-type π-orbital semiconductor epitaxy layer, a SiOpassivation layer, a graphite contact layer, a Schottky contact electrode, a binding layer, and a radioisotope layer. The N-type π-orbital semiconductor substrate includes an organic semiconductor material with an aromatic group or a semiconductor material with a carbon-carbon bond. The N-type π-orbital semiconductor epitaxy layer has a doping concentration of 1×10-5×10cmand is formed by injection of a cationic complex in a dose of 6×10-1×10cm.