The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Apr. 28, 2015
Applicant:

Nitto Denko Corporation, Ibaraki-shi, Osaka, JP;

Inventors:

Nozomi Fujino, Ibaraki, JP;

Tomotake Nashiki, Ibaraki, JP;

Daiki Kato, Ibaraki, JP;

Hironobu Machinaga, Ibaraki, JP;

Kazuaki Sasa, Ibaraki, JP;

Eri Ueda, Ibaraki, JP;

Tomoya Matsuda, Ibaraki, JP;

Assignee:

NITTO DENKO CORPORATION, Ibaraki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/041 (2006.01); C23C 14/35 (2006.01); G06F 3/045 (2006.01); H01B 5/14 (2006.01); G06F 3/044 (2006.01); C23C 14/08 (2006.01); C23C 14/58 (2006.01); B32B 9/00 (2006.01); C23C 14/02 (2006.01); C23C 14/56 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0416 (2013.01); B32B 9/00 (2013.01); C23C 14/024 (2013.01); C23C 14/086 (2013.01); C23C 14/35 (2013.01); C23C 14/564 (2013.01); C23C 14/5806 (2013.01); G06F 3/041 (2013.01); G06F 3/044 (2013.01); G06F 3/045 (2013.01); H01B 5/14 (2013.01); G06F 2203/04103 (2013.01);
Abstract

There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×10atoms/cmor less; and the transparent conductive layer has a specific resistance of 1.1×10Ω·cm or more and 2.8×10Ω·cm or less.


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