The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Jan. 12, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung-hyun Oh, Seoul, KR;

Woo-jin Jang, Hwaseong-si, KR;

Jong-woo Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/26 (2006.01); H04B 1/40 (2015.01); A61B 5/00 (2006.01);
U.S. Cl.
CPC ...
G05F 3/267 (2013.01); A61B 5/6898 (2013.01); H04B 1/40 (2013.01);
Abstract

A reference voltage circuit is provided. The reference voltage circuit includes a first current bias circuit including a first node; a second current bias circuit including a plurality of NMOS transistors and a second node, and an amplifier configured to output a reference voltage having same value as the second voltage. The plurality of NMOS transistors include a first NMOS transistor and a second NMOS transistor, the first NMOS transistor is connected to the first node, and the plurality of NMOS transistors are connected to the second node and configured to perform a sub-threshold operation based on a first voltage of the first node so that a second voltage is generated at the second node.


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