The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Sep. 11, 2015
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Eiji Sakamoto, Utsunomiya, JP;

Keiji Emoto, Saitama, JP;

Yutaka Watanabe, Shioya-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41F 7/00 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
G03F 9/7042 (2013.01); B41F 7/00 (2013.01); G03F 7/0002 (2013.01); G03F 7/7045 (2013.01); G03F 9/7038 (2013.01);
Abstract

The present invention provides a pattern forming method of forming a plurality of pattern layers on a substrate by using a plurality of lithography apparatuses including a first lithography apparatus and a second lithography apparatus, the method comprising a first step of forming a first pattern layer by the first lithography apparatus which adopts a die-by-die alignment method, based on alignment information obtained by using the die-by-die alignment method for a plurality of marks formed on the substrate by a lithography apparatus which adopts a global alignment method, and a second step of forming a second pattern layer so as to overlap with the first pattern layer by the second lithography apparatus, based on alignment information obtained by using the global alignment method for a plurality of shot regions formed on the substrate by the first lithography apparatus in the first step.


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