The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Oct. 11, 2013
Applicant:

Koninklijke Philips N.v., Eindhoven, NL;

Inventors:

Johan Hendrik Klootwijk, Eindhoven, NL;

Marleen Mescher, Eindhoven, NL;

Pascal De Graaf, Eindhoven, NL;

Bout Marcelis, Eindhoven, NL;

Assignee:

KONINKLIJKE PHILIPS N.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); G01N 27/414 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01); G01N 27/4146 (2013.01); H01L 29/0673 (2013.01); H01L 29/1033 (2013.01); H01L 29/16 (2013.01); G01N 27/4141 (2013.01); G01N 27/4145 (2013.01);
Abstract

An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.


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