The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Feb. 14, 2017
Invecas, Inc., Santa Clara, CA (US);
Santosh Kumar Pandiri, Hyderabad, IN;
Prasanth Kumar Krishna, Keralia, IN;
Koushik De, Hyderabad, IN;
Ankush Kumar Dubey, Katni, IN;
Invecas, Inc., Santa Clara, CA (US);
Abstract
Temperature sensors for integrated circuits that use back-gate bias for low power operation. A temperature sensor can comprise a voltage-gate-source generator having sensing transistors; an Ibias generator; a back-gate bias generator; and a temperature read-out circuit. In a calibration mode, the temperature sensor determines a back-gate bias voltage and a resistor trimming code to be used during functional operation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile