The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Aug. 02, 2016
Applicant:
Slt Technologies, Inc., Los Angeles, CA (US);
Inventors:
Mark P. D'Evelyn, Santa Barbara, CA (US);
Dirk Ehrentraut, Santa Barbara, CA (US);
Wenkan Jiang, Corona, CA (US);
Bradley C. Downey, Santa Barbara, CA (US);
Assignee:
SLT TECHNOLOGIES, INC., Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/00 (2006.01); C30B 33/06 (2006.01); C30B 29/40 (2006.01); C30B 25/18 (2006.01); C30B 25/02 (2006.01); C30B 7/10 (2006.01); C30B 25/20 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 31/0304 (2006.01); H01L 33/32 (2010.01); H01S 5/32 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
C30B 33/06 (2013.01); C30B 7/105 (2013.01); C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 25/20 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 33/00 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 31/03044 (2013.01); H01L 33/32 (2013.01); H01S 5/3202 (2013.01); H01S 5/32341 (2013.01); H01S 2304/00 (2013.01); Y10T 428/24355 (2015.01);
Abstract
An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.