The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2019
Filed:
Nov. 04, 2014
General Electric Company, Schenectady, NY (US);
Shizhong Wang, Shanghai, CN;
Wenqing Peng, Shanghai, CN;
Lawrence Bernard Kool, Clifton Park, NY (US);
Nan Hao, Shanghai, CN;
Wusheng Xu, Shanghai, CN;
Minghu Guo, Shanghai, CN;
Hong Zhou, Shanghai, CN;
Yanfei Gu, Shanghai, CN;
Zhaohui Yang, Shanghai, CN;
General Electric Company, Schenectady, NY (US);
Abstract
An apparatus has a surface exposable to a byproduct carbonaceous material formation environment and comprising a perovskite material having an ABOperovskite structure and being of formula ABO, wherein 0.9<a≤1.2; 0.9<b≤1.2; −0.5<δ<0.5; A is a combination of a first element and a second element, the first element is selected from yttrium, bismuth, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium and any combination thereof, the second element is selected from calcium, strontium, barium, lithium, sodium, potassium, rubidium and any combination thereof; and B is selected from silver, gold, cadmium, cerium, cobalt, chromium, copper, dysprosium, erbium, europium, ferrum, gallium, gadolinium, hafnium, holmium, indium, iridium, lanthanum, lutetium, manganese, molybdenum, niobium, neodymium, nickel, osmium, palladium, promethium, praseodymium, platinum, rhenium, rhodium, ruthenium, antimony, scandium, samarium, tin, tantalum, terbium, technetium, titanium, thulium, vanadium, tungsten, yttrium, ytterbium, zinc, zirconium, and any combination thereof. An associated method is also described.